TY - JOUR
T1 - Strong impact of SrTiO3/TiO2 buffer layer on epitaxial growth and dielectric response of Ba0.7Sr0.3TiO3 thin films on MgO
AU - Kondo, Shinya
AU - Yamada, Tomoaki
AU - Yoshino, Masahito
AU - Nagasaki, Takanori
N1 - Funding Information:
This work was partly supported by the Concert-Japan Project “FF-Photon” from the Japan Science and Technology Agency.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/9
Y1 - 2018/9
N2 - We demonstrate a significant improvement in the epitaxial growth of perovskite dielectric films on MgO by introducing a SrTiO3 (STO)/TiO2 buffer layer, which enhances their dielectric response. 270-nm-thick (001)-epitaxial (Ba,Sr)TiO3 (BST) films were deposited by pulsed laser deposition on STO/TiO2-buffered MgO with a SrRuO3 (SRO) bottom electrode. The film directly deposited on SRO/MgO grew in a three-dimensional mode, resulting in a rough and poorly crystalline film with an almost relaxed strain. On the other hand, the film with a buffer layer grew in a two-dimensional mode, resulting in a flat and highly crystalline film with a large compressive strain (%0.80%). As a result, the paraelectric-to-ferroelectric phase transition temperature increased by 220 °C and an out-of-plane dielectric constant exceeding 1000 was achieved.
AB - We demonstrate a significant improvement in the epitaxial growth of perovskite dielectric films on MgO by introducing a SrTiO3 (STO)/TiO2 buffer layer, which enhances their dielectric response. 270-nm-thick (001)-epitaxial (Ba,Sr)TiO3 (BST) films were deposited by pulsed laser deposition on STO/TiO2-buffered MgO with a SrRuO3 (SRO) bottom electrode. The film directly deposited on SRO/MgO grew in a three-dimensional mode, resulting in a rough and poorly crystalline film with an almost relaxed strain. On the other hand, the film with a buffer layer grew in a two-dimensional mode, resulting in a flat and highly crystalline film with a large compressive strain (%0.80%). As a result, the paraelectric-to-ferroelectric phase transition temperature increased by 220 °C and an out-of-plane dielectric constant exceeding 1000 was achieved.
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U2 - 10.7567/JJAP.57.0902B1
DO - 10.7567/JJAP.57.0902B1
M3 - Article
AN - SCOPUS:85053407979
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9
M1 - 0902B1
ER -