TY - JOUR
T1 - Structural control of organic conductors by uniaxial strain
T2 - θ- and α-phases of BEDT-TTF compounds
AU - Kondo, R.
AU - Kagoshima, S.
AU - Chusho, M.
AU - Hoshino, H.
AU - Mori, T.
AU - Mori, H.
AU - Tanaka, S.
N1 - Funding Information:
This work is supported by the Grant-in-Aid for Specially Promoted Research (no. 10102004) by the Ministry of Education, Culture Sports, Science and Technology, Japan.
PY - 2002/12
Y1 - 2002/12
N2 - The crystalline and electronic structures of the α-phase BEDT-TTF organic superconductors were controlled by the uniaxial compression along the selected crystalline axes. We found the bandwidth to be increased by the compression parallel to the a-axis while the c-axis compression reduced the bandwidth. Similar controls were possible also in the θ-phase compounds. The a-axis compression made the material metallic although the c-axis one insulating. It is possible to systematically explain these changes in electronic properties under the uniaxial compression in terms of the changes in the electronic band structure in the conducting layer.
AB - The crystalline and electronic structures of the α-phase BEDT-TTF organic superconductors were controlled by the uniaxial compression along the selected crystalline axes. We found the bandwidth to be increased by the compression parallel to the a-axis while the c-axis compression reduced the bandwidth. Similar controls were possible also in the θ-phase compounds. The a-axis compression made the material metallic although the c-axis one insulating. It is possible to systematically explain these changes in electronic properties under the uniaxial compression in terms of the changes in the electronic band structure in the conducting layer.
KW - Crystal structure
KW - Electronic structure
KW - Organic conductor
KW - Transport properties
KW - Uniaxial compression
KW - Uniaxial strain
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U2 - 10.1016/S1567-1739(02)00162-1
DO - 10.1016/S1567-1739(02)00162-1
M3 - Article
AN - SCOPUS:0036891586
SN - 1567-1739
VL - 2
SP - 483
EP - 487
JO - Current Applied Physics
JF - Current Applied Physics
IS - 6
ER -