Structure and stress-induced alignment of a hydrogen-carbon complex in silicon

We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of 〈111〉 and 〈110〉 compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the 〈100〉 stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a 〈110〉 stress of 1 GPa.