Structure and stress-induced alignment of a hydrogen-carbon complex in silicon

Yoichi Kamiura, Nobuaki Ishiga, Yoshifumi Yamashita

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25 Citations (Scopus)


We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of 〈111〉 and 〈110〉 compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the 〈100〉 stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a 〈110〉 stress of 1 GPa.

Original languageEnglish
Pages (from-to)L1419-L1421
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11 PART A
Publication statusPublished - Nov 1 1997


  • Carbon
  • DLTS
  • Defect
  • Hydrogen
  • Si
  • Stress-induced alignment

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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