Structure and transport properties of isomer-separated C82

Y. Kubozono; Y. Rikiishi; K. Shibata; T. Hosokawa; S. Fujiki; H. Kitagawa

doi:10.1103/PhysRevB.69.165412

Structure and transport properties of isomer-separated C₈₂

Y. Kubozono, Y. Rikiishi, K. Shibata, T. Hosokawa, S. Fujiki, H. Kitagawa

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Structure of isomer-separated crystalline C₈₂ has been studied by powder x-ray diffraction with synchrotron radiation. The Rietveld refinement was achieved by assuming a simple cubic lattice (space group Pa3). The C ₂(a) symmetry for the C₈₂ molecule was supported in this analysis. Transport properties of thin film of C₈₂ have been studied by resistivity measurement. The thin film showed a narrow-gap semiconductorlike behavior with gap energy of 0.43 eV. The field effect transistor (FET) of a C₈₂ thin film showed an n-channel normally-on depletion-type behavior, and the mobility was 1.9×10^-3 cm² V ^-1 s^-1 whose value was one of the largest μ among normally-on FETs with fullerenes. A hopping transport was found as channel conduction for the C₈₂ FET above 150 K.

Original language	English
Article number	165412
Pages (from-to)	165412-1-165412-7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.69.165412
Publication status	Published - Apr 1 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.165412

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T1 - Structure and transport properties of isomer-separated C82

AU - Kubozono, Y.

AU - Rikiishi, Y.

AU - Shibata, K.

AU - Hosokawa, T.

AU - Fujiki, S.

AU - Kitagawa, H.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Structure of isomer-separated crystalline C82 has been studied by powder x-ray diffraction with synchrotron radiation. The Rietveld refinement was achieved by assuming a simple cubic lattice (space group Pa3). The C 2(a) symmetry for the C82 molecule was supported in this analysis. Transport properties of thin film of C82 have been studied by resistivity measurement. The thin film showed a narrow-gap semiconductorlike behavior with gap energy of 0.43 eV. The field effect transistor (FET) of a C82 thin film showed an n-channel normally-on depletion-type behavior, and the mobility was 1.9×10-3 cm2 V -1 s-1 whose value was one of the largest μ among normally-on FETs with fullerenes. A hopping transport was found as channel conduction for the C82 FET above 150 K.

AB - Structure of isomer-separated crystalline C82 has been studied by powder x-ray diffraction with synchrotron radiation. The Rietveld refinement was achieved by assuming a simple cubic lattice (space group Pa3). The C 2(a) symmetry for the C82 molecule was supported in this analysis. Transport properties of thin film of C82 have been studied by resistivity measurement. The thin film showed a narrow-gap semiconductorlike behavior with gap energy of 0.43 eV. The field effect transistor (FET) of a C82 thin film showed an n-channel normally-on depletion-type behavior, and the mobility was 1.9×10-3 cm2 V -1 s-1 whose value was one of the largest μ among normally-on FETs with fullerenes. A hopping transport was found as channel conduction for the C82 FET above 150 K.

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Structure and transport properties of isomer-separated C₈₂

Abstract

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