Structure of isomer-separated crystalline C82 has been studied by powder x-ray diffraction with synchrotron radiation. The Rietveld refinement was achieved by assuming a simple cubic lattice (space group Pa3). The C 2(a) symmetry for the C82 molecule was supported in this analysis. Transport properties of thin film of C82 have been studied by resistivity measurement. The thin film showed a narrow-gap semiconductorlike behavior with gap energy of 0.43 eV. The field effect transistor (FET) of a C82 thin film showed an n-channel normally-on depletion-type behavior, and the mobility was 1.9×10-3 cm2 V -1 s-1 whose value was one of the largest μ among normally-on FETs with fullerenes. A hopping transport was found as channel conduction for the C82 FET above 150 K.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Apr 1 2004|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics