Superconductivity in boron-doped SiC

Zhi An Ren; Junya Kato; Takahiro Muranaka; Jun Akimitsu; Markus Kriener; Yoshiteru Maeno

doi:10.1143/JPSJ.76.103710

Superconductivity in boron-doped SiC

Zhi An Ren, Junya Kato, Takahiro Muranaka, Jun Akimitsu, Markus Kriener, Yoshiteru Maeno

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T _c of ∼1.4 K, and an effective boron doping concentration higher than 10 ²¹ cm ^-3. We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H _c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at T _c, demonstrating bulk nature of the superconductivity.

Original language	English
Article number	103710
Journal	journal of the physical society of japan
Volume	76
Issue number	10
DOIs	https://doi.org/10.1143/JPSJ.76.103710
Publication status	Published - Oct 2007
Externally published	Yes

Keywords

Heavily boron-doped
SiC
Superconductivity
Wide-gap semiconductor

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1143/JPSJ.76.103710

Cite this

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title = "Superconductivity in boron-doped SiC",

abstract = "We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T c of ∼1.4 K, and an effective boron doping concentration higher than 10 21 cm -3. We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at T c, demonstrating bulk nature of the superconductivity.",

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AU - Ren, Zhi An

AU - Kato, Junya

AU - Muranaka, Takahiro

AU - Akimitsu, Jun

AU - Kriener, Markus

AU - Maeno, Yoshiteru

PY - 2007/10

Y1 - 2007/10

N2 - We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T c of ∼1.4 K, and an effective boron doping concentration higher than 10 21 cm -3. We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at T c, demonstrating bulk nature of the superconductivity.

AB - We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T c of ∼1.4 K, and an effective boron doping concentration higher than 10 21 cm -3. We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at T c, demonstrating bulk nature of the superconductivity.

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KW - Superconductivity

KW - Wide-gap semiconductor

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Superconductivity in boron-doped SiC

Abstract

Keywords

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