Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

Takahiro Muranaka; Koji Kobashi; Hirotaka Okabe; Takeshi Tachibana; Yoshihiro Yokota; Kazushi Hayashi; Nobuyuki Kawakami; Jun Akimitsu

doi:10.1016/j.diamond.2011.06.011

Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

Takahiro Muranaka, Koji Kobashi, Hirotaka Okabe, Takeshi Tachibana, Yoshihiro Yokota, Kazushi Hayashi, Nobuyuki Kawakami, Jun Akimitsu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were T_c(onset) = 5.0 K and T _c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T _c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in T_c for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.

Original language	English
Pages (from-to)	1273-1281
Number of pages	9
Journal	Diamond and Related Materials
Volume	20
Issue number	9
DOIs	https://doi.org/10.1016/j.diamond.2011.06.011
Publication status	Published - Oct 2011
Externally published	Yes

Keywords

Akai-KKR
B-doped diamond
SEM
Superconductivity
XPS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2011.06.011

Cite this

@article{c845f1aab2a04d94bacfeac93e3f2a24,

title = "Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films",

abstract = "We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were Tc(onset) = 5.0 K and T c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in Tc for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.",

keywords = "Akai-KKR, B-doped diamond, SEM, Superconductivity, XPS",

author = "Takahiro Muranaka and Koji Kobashi and Hirotaka Okabe and Takeshi Tachibana and Yoshihiro Yokota and Kazushi Hayashi and Nobuyuki Kawakami and Jun Akimitsu",

note = "Funding Information: We would like to acknowledge Professor A. Sawabe and Mr. M. Ohno (Aoyama Gakuin Univ.) for useful discussions and Mr. H. Yamaguchi (technical staff of Analysis Equipment Center at Aoyama Gakuin Univ.) for his support in XPS analysis. This work was supported by the {"}High-Tech Research Center{"} Project for Private Universities from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), the Asahi Glass Foundation, the Iketani Science and Technology Foundation, aGrant-in-Aid for Scientific Research on Priority Area {"}Strategy in Ubiquitous Elements{"} (No. 22013015), a Grant-in-Aid for Young Scientists (B) (No. 20740202), and a Grant-in-Aid for Exploratory Research (No. 20654029) from MEXT.",

year = "2011",

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doi = "10.1016/j.diamond.2011.06.011",

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T1 - Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

AU - Muranaka, Takahiro

AU - Kobashi, Koji

AU - Okabe, Hirotaka

AU - Tachibana, Takeshi

AU - Yokota, Yoshihiro

AU - Hayashi, Kazushi

AU - Kawakami, Nobuyuki

AU - Akimitsu, Jun

N1 - Funding Information: We would like to acknowledge Professor A. Sawabe and Mr. M. Ohno (Aoyama Gakuin Univ.) for useful discussions and Mr. H. Yamaguchi (technical staff of Analysis Equipment Center at Aoyama Gakuin Univ.) for his support in XPS analysis. This work was supported by the "High-Tech Research Center" Project for Private Universities from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), the Asahi Glass Foundation, the Iketani Science and Technology Foundation, aGrant-in-Aid for Scientific Research on Priority Area "Strategy in Ubiquitous Elements" (No. 22013015), a Grant-in-Aid for Young Scientists (B) (No. 20740202), and a Grant-in-Aid for Exploratory Research (No. 20654029) from MEXT.

PY - 2011/10

Y1 - 2011/10

N2 - We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were Tc(onset) = 5.0 K and T c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in Tc for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.

AB - We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were Tc(onset) = 5.0 K and T c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in Tc for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.

KW - Akai-KKR

KW - B-doped diamond

KW - SEM

KW - Superconductivity

KW - XPS

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Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

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