Supercritical resist dryer

Hideo Namatsu; Kenji Yamazaki; Kenji Kurihara

doi:10.1116/1.591276

Supercritical resist dryer

Hideo Namatsu, Kenji Yamazaki, Kenji Kurihara

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

A supercritical resist dryer (SRD) based on supercritical (SC) drying by controlling moisture is developed. It was effective to dry using SC CO₂ at a lower pressure just above the critical point, and adding a pumping system of SC CO₂ to the Teflon-coated chamber to reduce water contamination. The SRD yielded high-aspect-ratio resist patterns without any pattern collapse or deformation.

Original language	English
Pages (from-to)	780-784
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.591276
Publication status	Published - Mar 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591276

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title = "Supercritical resist dryer",

abstract = "A supercritical resist dryer (SRD) based on supercritical (SC) drying by controlling moisture is developed. It was effective to dry using SC CO2 at a lower pressure just above the critical point, and adding a pumping system of SC CO2 to the Teflon-coated chamber to reduce water contamination. The SRD yielded high-aspect-ratio resist patterns without any pattern collapse or deformation.",

author = "Hideo Namatsu and Kenji Yamazaki and Kenji Kurihara",

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doi = "10.1116/1.591276",

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AB - A supercritical resist dryer (SRD) based on supercritical (SC) drying by controlling moisture is developed. It was effective to dry using SC CO2 at a lower pressure just above the critical point, and adding a pumping system of SC CO2 to the Teflon-coated chamber to reduce water contamination. The SRD yielded high-aspect-ratio resist patterns without any pattern collapse or deformation.

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Supercritical resist dryer

Abstract

ASJC Scopus subject areas

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