Suppressed Aggregate Extraction Development (SAGEX) Resists

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polymer aggregates in resist films. Some aggregates are extracted during development, but those remaining embedded on the pattern sidewall cause the LER. To suppress such aggregate extraction development, we fix the aggregates by cross-linking their surrounding polymers in advance before exposure and development. The cross-linking does not greatly affect the exposure reaction by electron-beam. The SAGEX resist made by the cross-linking indicates reduced LER in addition to fine patterning.

Original languageEnglish
Pages (from-to)427-433
Number of pages7
JournalJournal of Photopolymer Science and Technology
Issue number3
Publication statusPublished - 2000


  • Aggregate extraction development
  • Line-edge roughness
  • Polymer aggregates
  • Positive-tone resist

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry


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