Suppressed Aggregate Extraction Development (SAGEX) Resists

Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Yamazaki; Kenji Kurihara

doi:10.2494/photopolymer.13.427

Suppressed Aggregate Extraction Development (SAGEX) Resists

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

School of Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polymer aggregates in resist films. Some aggregates are extracted during development, but those remaining embedded on the pattern sidewall cause the LER. To suppress such aggregate extraction development, we fix the aggregates by cross-linking their surrounding polymers in advance before exposure and development. The cross-linking does not greatly affect the exposure reaction by electron-beam. The SAGEX resist made by the cross-linking indicates reduced LER in addition to fine patterning.

Original language	English
Pages (from-to)	427-433
Number of pages	7
Journal	Journal of Photopolymer Science and Technology
Volume	13
Issue number	3
DOIs	https://doi.org/10.2494/photopolymer.13.427
Publication status	Published - 2000

Keywords

Aggregate extraction development
Line-edge roughness
Polymer aggregates
Positive-tone resist

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry
Materials Chemistry

Access to Document

10.2494/photopolymer.13.427

Cite this

@article{5f5be2728cd6416b8b28598e5a0f5293,

title = "Suppressed Aggregate Extraction Development (SAGEX) Resists",

abstract = "We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polymer aggregates in resist films. Some aggregates are extracted during development, but those remaining embedded on the pattern sidewall cause the LER. To suppress such aggregate extraction development, we fix the aggregates by cross-linking their surrounding polymers in advance before exposure and development. The cross-linking does not greatly affect the exposure reaction by electron-beam. The SAGEX resist made by the cross-linking indicates reduced LER in addition to fine patterning.",

keywords = "Aggregate extraction development, Line-edge roughness, Polymer aggregates, Positive-tone resist",

author = "Toru Yamaguchi and Hideo Namatsu and Masao Nagase and Kenji Yamazaki and Kenji Kurihara",

year = "2000",

doi = "10.2494/photopolymer.13.427",

language = "English",

volume = "13",

pages = "427--433",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

number = "3",

}

TY - JOUR

T1 - Suppressed Aggregate Extraction Development (SAGEX) Resists

AU - Yamaguchi, Toru

AU - Namatsu, Hideo

AU - Nagase, Masao

AU - Yamazaki, Kenji

AU - Kurihara, Kenji

PY - 2000

Y1 - 2000

N2 - We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polymer aggregates in resist films. Some aggregates are extracted during development, but those remaining embedded on the pattern sidewall cause the LER. To suppress such aggregate extraction development, we fix the aggregates by cross-linking their surrounding polymers in advance before exposure and development. The cross-linking does not greatly affect the exposure reaction by electron-beam. The SAGEX resist made by the cross-linking indicates reduced LER in addition to fine patterning.

AB - We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polymer aggregates in resist films. Some aggregates are extracted during development, but those remaining embedded on the pattern sidewall cause the LER. To suppress such aggregate extraction development, we fix the aggregates by cross-linking their surrounding polymers in advance before exposure and development. The cross-linking does not greatly affect the exposure reaction by electron-beam. The SAGEX resist made by the cross-linking indicates reduced LER in addition to fine patterning.

KW - Aggregate extraction development

KW - Line-edge roughness

KW - Polymer aggregates

KW - Positive-tone resist

UR - http://www.scopus.com/inward/record.url?scp=0034583970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034583970&partnerID=8YFLogxK

U2 - 10.2494/photopolymer.13.427

DO - 10.2494/photopolymer.13.427

M3 - Article

AN - SCOPUS:0034583970

SN - 0914-9244

VL - 13

SP - 427

EP - 433

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

IS - 3

ER -

Suppressed Aggregate Extraction Development (SAGEX) Resists

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this