Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation

Hideki Fukano; Yoshifumi Takanashi; Masatomo Fujimoto

doi:10.1143/JJAP.32.L1788

Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation

Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The correlation between the passivation film formation for InP/lnGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-Vcharacteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (I_b), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (I_c) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.

Original language	English
Pages (from-to)	L1788-L1791
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	12 B
DOIs	https://doi.org/10.1143/JJAP.32.L1788
Publication status	Published - Dec 1993
Externally published	Yes

Keywords

HBT
InGaAs
Inp
Passivation
Surface current

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.32.L1788

Cite this

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title = "Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation",

abstract = "The correlation between the passivation film formation for InP/lnGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-Vcharacteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (Ib), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (Ic) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.",

keywords = "HBT, InGaAs, Inp, Passivation, Surface current",

author = "Hideki Fukano and Yoshifumi Takanashi and Masatomo Fujimoto",

year = "1993",

month = dec,

doi = "10.1143/JJAP.32.L1788",

language = "English",

volume = "32",

pages = "L1788--L1791",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",

number = "12 B",

}

TY - JOUR

T1 - Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation

AU - Fukano, Hideki

AU - Takanashi, Yoshifumi

AU - Fujimoto, Masatomo

PY - 1993/12

Y1 - 1993/12

N2 - The correlation between the passivation film formation for InP/lnGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-Vcharacteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (Ib), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (Ic) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.

AB - The correlation between the passivation film formation for InP/lnGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-Vcharacteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (Ib), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (Ic) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.

KW - HBT

KW - InGaAs

KW - Inp

KW - Passivation

KW - Surface current

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DO - 10.1143/JJAP.32.L1788

M3 - Article

AN - SCOPUS:0342572164

SN - 0021-4922

VL - 32

SP - L1788-L1791

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 12 B

ER -

Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation

Abstract

Keywords

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