Surface electron-ion mixed conduction of BaTiO3−δ thin film with oxygen vacancies

Tomoasa Takada, Takeshi Fujita, Takehiro Imagawa, Emi Yamamoto, Jun Kano, Daisuke Shiga, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

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A BaTiO3δ thin film with oxygen vacancies was prepared on a Pt=Al2O3 (0001) substrate by RF magnetron sputtering. The prepared thin film was preferentially grown in the [111] direction. The BaTiO3δ thin film with a reduced interplanar distance (d111) exhibited the Ti3+ valence state of 4.4%, which is closely related to concentration of oxygen vacancies. The activation energy estimated from the Arrhenius plot of the electrical conductivity was approximately 61 meV. The electrical conductivity of ∼10−5 S=cm at room temperature did not depend on the oxygen gas partial pressure. The photoemission spectra exhibited the O-H bond peak and donor state near the Fermi level. These results indicate that the BaTiO3δ=Pt=Al2O3 (0001) thin film has surface electron-proton mixed conduction at room temperature.

Original languageEnglish
Article number014707
Journaljournal of the physical society of japan
Issue number1
Publication statusPublished - Jan 15 2021

ASJC Scopus subject areas

  • General Physics and Astronomy


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