TY - JOUR
T1 - Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
AU - Hyodo, Keita
AU - Toyama, Ryota
AU - Mori, Hiroki
AU - Nishihara, Yasushi
N1 - Funding Information:
This work was partly supported by ACT-C, JST, a Grant-in-Aid for Scientific Research (KAKENHI) (No. 15J07968) from JSPS, the Program for Promoting the Enhancement of Research Universities from MEXT, and as a Special Project of Okayama University. The authors gratefully thank Profs. Koichi Mitsudo and Seiji Suga (Okayama University) for CV measurements, Prof. Naoshi Ikeda (Okayama University) for AFM imaging, and M. Kosaka and M. Kobayashi at the Department of Instrumental Analysis, Advanced Science Research Center, Okayama University, for performing elemental analyses. They also thank the SC-NMR Laboratory of Okayama University for the NMR spectral measurements.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/1/31
Y1 - 2017/1/31
N2 - Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C8-PiDT) showed excellent hole mobility, as high as 2.36 cm2 V-1 s-1. Their structure-property relationships were investigated by X-ray diffraction and atomic force microscopy.
AB - Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C8-PiDT) showed excellent hole mobility, as high as 2.36 cm2 V-1 s-1. Their structure-property relationships were investigated by X-ray diffraction and atomic force microscopy.
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U2 - 10.1021/acsomega.7b00015
DO - 10.1021/acsomega.7b00015
M3 - Article
AN - SCOPUS:85028913422
SN - 2470-1343
VL - 2
SP - 308
EP - 315
JO - ACS Omega
JF - ACS Omega
IS - 1
ER -