Temperature dependence of luminescence in ZnSe

Kenji Yoshino, Yasushi Matsushima, Shirley Tiong-Palisoc, Kenzo Ohmori, Makoto Hiramatsu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown by a sublimination method. The temperature dependence of the photoluminescence (PL) spectra in the blue emission region is measured from 4.2 K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnSe from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission band undergoes considerable attenuation at 100 K. However, the emission band is clearly observed in Se-annealed ZnSe up to near room temperature. These results prove that the disappearance of Se vacancies enhances room temperature PL.

Original languageEnglish
Pages (from-to)68-71
Number of pages4
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - Dec 1995
Externally publishedYes


  • Optical properties
  • Photoluminescence
  • Semiconductors
  • Sublimation method
  • Vacancy
  • ZnSe

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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