TY - GEN
T1 - Terahertz properties from the surface of strained SiGe on Si multilayered structure
AU - Omura, K.
AU - Nakamura, A.
AU - Kiwa, T.
AU - Yamashita, Y.
AU - Sakai, K.
AU - Tsukada, K.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - A Large-scale integration (LSI) has been improved by scaling contraction. Strained Si has been proposed as a higher carrier mobility than usual. We have evaluated the strained SiGe wafer by LTEM, which is a method of analyzing to detect THz waves generated by fs laser irradiated into the sample.
AB - A Large-scale integration (LSI) has been improved by scaling contraction. Strained Si has been proposed as a higher carrier mobility than usual. We have evaluated the strained SiGe wafer by LTEM, which is a method of analyzing to detect THz waves generated by fs laser irradiated into the sample.
UR - http://www.scopus.com/inward/record.url?scp=84893394524&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893394524&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2013.6665819
DO - 10.1109/IRMMW-THz.2013.6665819
M3 - Conference contribution
AN - SCOPUS:84893394524
SN - 9781467347174
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
T2 - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
Y2 - 1 September 2013 through 6 September 2013
ER -