Terahertz radiation from InAs/AlxGa1-xSb (x = 0.5) heterostructures

Masato Suzuki; Toshihiko Kiwa; Masayoshi Tonouchi; Yoji Nakajima; Shigehiko Sasa; Masataka Inoue

doi:10.1016/j.physe.2003.12.073

Terahertz radiation from InAs/Al_xGa_1-xSb (x = 0.5) heterostructures

Masato Suzuki, Toshihiko Kiwa, Masayoshi Tonouchi, Yoji Nakajima, Shigehiko Sasa, Masataka Inoue

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We observed terahertz radiation from InAs/Al_0.5Ga _0.5Sb heterostructures excited by femtosecond pulses of mode-locked Ti:sapphire laser in the temperature range of 20-300 K. The radiation pseudo-reflected is monitored in time domain by a low temperature grown GaAs photoswitch. Although the waveforms are almost identical irrespective of temperatures, their maximum amplitude is strongly temperature dependent and peaks at around 100 K. Laser power dependence of the amplitude indicates that the excitation at power densities above 57 W/cm² induce saturation presumably due to screening effect.

Original language	English
Pages (from-to)	574-577
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.12.073
Publication status	Published - Apr 2004
Externally published	Yes
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: Jul 14 2003 → Jul 18 2003

Keywords

2DEG
Carrier transport
InAs/AlGaSb
THz radiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2003.12.073

Cite this

@article{14cc3aa7f7a64e8ab4f9fcfed8a4fd29,

title = "Terahertz radiation from InAs/AlxGa1-xSb (x = 0.5) heterostructures",

abstract = "We observed terahertz radiation from InAs/Al0.5Ga 0.5Sb heterostructures excited by femtosecond pulses of mode-locked Ti:sapphire laser in the temperature range of 20-300 K. The radiation pseudo-reflected is monitored in time domain by a low temperature grown GaAs photoswitch. Although the waveforms are almost identical irrespective of temperatures, their maximum amplitude is strongly temperature dependent and peaks at around 100 K. Laser power dependence of the amplitude indicates that the excitation at power densities above 57 W/cm2 induce saturation presumably due to screening effect.",

keywords = "2DEG, Carrier transport, InAs/AlGaSb, THz radiation",

author = "Masato Suzuki and Toshihiko Kiwa and Masayoshi Tonouchi and Yoji Nakajima and Shigehiko Sasa and Masataka Inoue",

note = "Funding Information: This work was supported by the Strategic Information and Communications R&D Promotion Scheme Program from the Ministry of Public Management, Home Affairs, Posts and Telecommunications. ; 15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

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doi = "10.1016/j.physe.2003.12.073",

language = "English",

volume = "22",

pages = "574--577",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-3",

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TY - JOUR

T1 - Terahertz radiation from InAs/AlxGa1-xSb (x = 0.5) heterostructures

AU - Suzuki, Masato

AU - Kiwa, Toshihiko

AU - Tonouchi, Masayoshi

AU - Nakajima, Yoji

AU - Sasa, Shigehiko

AU - Inoue, Masataka

N1 - Funding Information: This work was supported by the Strategic Information and Communications R&D Promotion Scheme Program from the Ministry of Public Management, Home Affairs, Posts and Telecommunications.

PY - 2004/4

Y1 - 2004/4

N2 - We observed terahertz radiation from InAs/Al0.5Ga 0.5Sb heterostructures excited by femtosecond pulses of mode-locked Ti:sapphire laser in the temperature range of 20-300 K. The radiation pseudo-reflected is monitored in time domain by a low temperature grown GaAs photoswitch. Although the waveforms are almost identical irrespective of temperatures, their maximum amplitude is strongly temperature dependent and peaks at around 100 K. Laser power dependence of the amplitude indicates that the excitation at power densities above 57 W/cm2 induce saturation presumably due to screening effect.

AB - We observed terahertz radiation from InAs/Al0.5Ga 0.5Sb heterostructures excited by femtosecond pulses of mode-locked Ti:sapphire laser in the temperature range of 20-300 K. The radiation pseudo-reflected is monitored in time domain by a low temperature grown GaAs photoswitch. Although the waveforms are almost identical irrespective of temperatures, their maximum amplitude is strongly temperature dependent and peaks at around 100 K. Laser power dependence of the amplitude indicates that the excitation at power densities above 57 W/cm2 induce saturation presumably due to screening effect.

KW - 2DEG

KW - Carrier transport

KW - InAs/AlGaSb

KW - THz radiation

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DO - 10.1016/j.physe.2003.12.073

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SN - 1386-9477

VL - 22

SP - 574

EP - 577

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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ER -