Terahertz radiation from InAs/AlxGa1-xSb (x = 0.5) heterostructures

Masato Suzuki, Toshihiko Kiwa, Masayoshi Tonouchi, Yoji Nakajima, Shigehiko Sasa, Masataka Inoue

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We observed terahertz radiation from InAs/Al0.5Ga 0.5Sb heterostructures excited by femtosecond pulses of mode-locked Ti:sapphire laser in the temperature range of 20-300 K. The radiation pseudo-reflected is monitored in time domain by a low temperature grown GaAs photoswitch. Although the waveforms are almost identical irrespective of temperatures, their maximum amplitude is strongly temperature dependent and peaks at around 100 K. Laser power dependence of the amplitude indicates that the excitation at power densities above 57 W/cm2 induce saturation presumably due to screening effect.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - Apr 2004
Externally publishedYes
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003


  • 2DEG
  • Carrier transport
  • InAs/AlGaSb
  • THz radiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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