The effect of post-annealing process in NdGaO3 new seed layer for LPE

Seok Beom Kim, Sang Im Yoo, Yasuji Yamada

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Novel porous NdGaO3 (NGO) thin film was fabricated as a new seed layer for liquid phase epitaxy growth of YBa2Cu 3O7-δ. The microstructure and crystallization mechanism of NGO new seed layer due to post-annealing temperature were revealed by high resolution SEM. Amorphous NGO layers on LaAlO3 single crystalline substrate obtained by pulsed laser deposition method at room temperature and this layer shows the very porous and columnar structure. And this amorphous NGO layers were annealed at wide temperature range below 1300 °C in air. Amorphous NGO layer begins to crystallize by post-annealed at 750 °C and its orientation gets better with increased annealing temperature. The thickness of NGO layers decrease with increased annealing temperature above 500 °C and the well-oriented NGO layers were obtained between 900 and 1300 °C. The NGO layers annealed at above 1100 °C show very dense film.

Original languageEnglish
Pages (from-to)951-955
Number of pages5
JournalPhysica C: Superconductivity and its applications
Issue numberPART 2
Publication statusPublished - Oct 2003
Externally publishedYes
EventProceedings of the 15th International Symposium on Superconduc - Yokohama, Japan
Duration: Nov 11 2002Nov 13 2002


  • LPE process
  • NdGaO
  • YBCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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