The effect of post-annealing process in NdGaO3 new seed layer for LPE

Seok Beom Kim; Sang Im Yoo; Yasuji Yamada

doi:10.1016/S0921-4534(03)00862-1

The effect of post-annealing process in NdGaO₃ new seed layer for LPE

Seok Beom Kim, Sang Im Yoo, Yasuji Yamada

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Novel porous NdGaO₃ (NGO) thin film was fabricated as a new seed layer for liquid phase epitaxy growth of YBa₂Cu ₃O_7-δ. The microstructure and crystallization mechanism of NGO new seed layer due to post-annealing temperature were revealed by high resolution SEM. Amorphous NGO layers on LaAlO₃ single crystalline substrate obtained by pulsed laser deposition method at room temperature and this layer shows the very porous and columnar structure. And this amorphous NGO layers were annealed at wide temperature range below 1300 °C in air. Amorphous NGO layer begins to crystallize by post-annealed at 750 °C and its orientation gets better with increased annealing temperature. The thickness of NGO layers decrease with increased annealing temperature above 500 °C and the well-oriented NGO layers were obtained between 900 and 1300 °C. The NGO layers annealed at above 1100 °C show very dense film.

Original language	English
Pages (from-to)	951-955
Number of pages	5
Journal	Physica C: Superconductivity and its applications
Volume	392-396
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0921-4534(03)00862-1
Publication status	Published - Oct 2003
Externally published	Yes
Event	Proceedings of the 15th International Symposium on Superconduc - Yokohama, Japan Duration: Nov 11 2002 → Nov 13 2002

Keywords

LPE process
NdGaO
YBCO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4534(03)00862-1

Cite this

@article{e4a2d6d299244d7c9dff9a7eac82ece2,

title = "The effect of post-annealing process in NdGaO3 new seed layer for LPE",

abstract = "Novel porous NdGaO3 (NGO) thin film was fabricated as a new seed layer for liquid phase epitaxy growth of YBa2Cu 3O7-δ. The microstructure and crystallization mechanism of NGO new seed layer due to post-annealing temperature were revealed by high resolution SEM. Amorphous NGO layers on LaAlO3 single crystalline substrate obtained by pulsed laser deposition method at room temperature and this layer shows the very porous and columnar structure. And this amorphous NGO layers were annealed at wide temperature range below 1300 °C in air. Amorphous NGO layer begins to crystallize by post-annealed at 750 °C and its orientation gets better with increased annealing temperature. The thickness of NGO layers decrease with increased annealing temperature above 500 °C and the well-oriented NGO layers were obtained between 900 and 1300 °C. The NGO layers annealed at above 1100 °C show very dense film.",

keywords = "LPE process, NdGaO, YBCO",

author = "Kim, {Seok Beom} and Yoo, {Sang Im} and Yasuji Yamada",

note = "Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO). And it was partially supported by a grant from Center for Applied Superconductivity Technology of the 21st century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.; Proceedings of the 15th International Symposium on Superconduc ; Conference date: 11-11-2002 Through 13-11-2002",

year = "2003",

month = oct,

doi = "10.1016/S0921-4534(03)00862-1",

language = "English",

volume = "392-396",

pages = "951--955",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - The effect of post-annealing process in NdGaO3 new seed layer for LPE

AU - Kim, Seok Beom

AU - Yoo, Sang Im

AU - Yamada, Yasuji

N1 - Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO). And it was partially supported by a grant from Center for Applied Superconductivity Technology of the 21st century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

PY - 2003/10

Y1 - 2003/10

N2 - Novel porous NdGaO3 (NGO) thin film was fabricated as a new seed layer for liquid phase epitaxy growth of YBa2Cu 3O7-δ. The microstructure and crystallization mechanism of NGO new seed layer due to post-annealing temperature were revealed by high resolution SEM. Amorphous NGO layers on LaAlO3 single crystalline substrate obtained by pulsed laser deposition method at room temperature and this layer shows the very porous and columnar structure. And this amorphous NGO layers were annealed at wide temperature range below 1300 °C in air. Amorphous NGO layer begins to crystallize by post-annealed at 750 °C and its orientation gets better with increased annealing temperature. The thickness of NGO layers decrease with increased annealing temperature above 500 °C and the well-oriented NGO layers were obtained between 900 and 1300 °C. The NGO layers annealed at above 1100 °C show very dense film.

AB - Novel porous NdGaO3 (NGO) thin film was fabricated as a new seed layer for liquid phase epitaxy growth of YBa2Cu 3O7-δ. The microstructure and crystallization mechanism of NGO new seed layer due to post-annealing temperature were revealed by high resolution SEM. Amorphous NGO layers on LaAlO3 single crystalline substrate obtained by pulsed laser deposition method at room temperature and this layer shows the very porous and columnar structure. And this amorphous NGO layers were annealed at wide temperature range below 1300 °C in air. Amorphous NGO layer begins to crystallize by post-annealed at 750 °C and its orientation gets better with increased annealing temperature. The thickness of NGO layers decrease with increased annealing temperature above 500 °C and the well-oriented NGO layers were obtained between 900 and 1300 °C. The NGO layers annealed at above 1100 °C show very dense film.

KW - LPE process

KW - NdGaO

KW - YBCO

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SN - 0921-4534

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JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

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