The electronic structure of porphyrin/metal interfaces studied by UV photoemission spectroscopy

D. Yoshumira, H. Ishii, S. Narioka, M. Sei, T. Miyazaki, Y. Ouchi, S. Hasegawa, Y. Harima, K. Yamashita, K. Seki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The electronic structures of the interface between porphyrin and metal (Mg, Al, Ag and Au) were studied by UV photoemission spectroscopy (UPS). The samples were 5,10,15,20-tetraphenylporphynatozinc(ZnTPP), 5,10,15,20-tetra(4-pyridyl) porphyrin(H2T(4-Py)P) and 5,10,15,20-tetra-phenylporphyrin(H2TPP) which are known as organic semiconductors. We found that the energy levels of these porphyrins relative to the Fermi level of the substrate metals could be expressed as linear functions of the work function of metals with a shift of the vacuum level at interface (delta sign). This indicates that the energy levels of these porphyrins are fixed to the vacuum level of substrate metal with an interfacial dipole layer. We also found that the magnitude of delta sign is constant at ZnTPP/metal interfaces, but depends on the work function of the metal at H2T(4-Py)P and H2TPP/metal interfaces. This work function dependence of delta sign might be explained by the existence of interface state.

Original languageEnglish
Pages (from-to)2399-2400
Number of pages2
JournalSynthetic Metals
Volume86
Issue number1-3
DOIs
Publication statusPublished - Feb 28 1997
Externally publishedYes

Keywords

  • Organic semiconductor based on conjugated molecules
  • Organic/inorganic interfaces
  • Photoelectron spectroscopy
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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