Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

Yasuhiko Hayashi; Yasunori Agata; Tetsuo Soga; Takashi Jimbo; Masayoshi Umeno; Nobuhiko Sato; Takao Yonehara

Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

Yasuhiko Hayashi, Yasunori Agata, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno, Nobuhiko Sato, Takao Yonehara

Research output: Contribution to journal › Article › peer-review

Abstract

We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.

Original language	English
Pages (from-to)	L1354-L1357
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	11 SUPPL. B
Publication status	Published - Nov 15 1998
Externally published	Yes

Keywords

Heterostructure GaAs/Si
Photoluminescence
Porous Si
Raman scattering
Thermal stress
Thin Si layer
X-ray diffraction

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition. / Hayashi, Yasuhiko; Agata, Yasunori; Soga, Tetsuo et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 11 SUPPL. B, 15.11.1998, p. L1354-L1357.

Research output: Contribution to journal › Article › peer-review

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AU - Hayashi, Yasuhiko

AU - Agata, Yasunori

AU - Soga, Tetsuo

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

AU - Sato, Nobuhiko

AU - Yonehara, Takao

PY - 1998/11/15

Y1 - 1998/11/15

N2 - We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.

AB - We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.

KW - Heterostructure GaAs/Si

KW - Photoluminescence

KW - Porous Si

KW - Raman scattering

KW - Thermal stress

KW - Thin Si layer

KW - X-ray diffraction

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Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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