Three-dimensional alignment with 10 nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication

Kenji Yamazaki; Hiroshi Yamaguchi

doi:10.1116/1.2976600

Three-dimensional alignment with 10 nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication

Kenji Yamazaki, Hiroshi Yamaguchi

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Three-dimensional (3D) alignment with 10 nm order accuracy in 3D electron-beam (EB) lithography has been achieved by means of highly accurate rotation control and mark location using the transmission electron signal. Accurately aligned EB writing from various directions on micron order resists blocks on a small substrate provides great structural flexibility in the creation of 3D nanostructures. As a demonstration of the accuracy, a 3D hydrogen silsesquioxane nanostructure was made by 3D EB writing and two-step development using different developers. Moreover, a 3D poly(methyl methacrylate) nanostructure was made by repeated 3D EB writing and development to demonstrate 3D nanofabrication with great structural flexibility.

Original language	English
Pages (from-to)	2529-2533
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	6
DOIs	https://doi.org/10.1116/1.2976600
Publication status	Published - 2008

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2976600

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Three-dimensional alignment with 10 nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication. / Yamazaki, Kenji; Yamaguchi, Hiroshi.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6, 2008, p. 2529-2533.

Research output: Contribution to journal › Article › peer-review

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abstract = "Three-dimensional (3D) alignment with 10 nm order accuracy in 3D electron-beam (EB) lithography has been achieved by means of highly accurate rotation control and mark location using the transmission electron signal. Accurately aligned EB writing from various directions on micron order resists blocks on a small substrate provides great structural flexibility in the creation of 3D nanostructures. As a demonstration of the accuracy, a 3D hydrogen silsesquioxane nanostructure was made by 3D EB writing and two-step development using different developers. Moreover, a 3D poly(methyl methacrylate) nanostructure was made by repeated 3D EB writing and development to demonstrate 3D nanofabrication with great structural flexibility.",

author = "Kenji Yamazaki and Hiroshi Yamaguchi",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (No. 20246064).",

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AU - Yamazaki, Kenji

AU - Yamaguchi, Hiroshi

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Three-dimensional alignment with 10 nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication

Abstract

ASJC Scopus subject areas

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