Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

Yoshihiro Kubozono; Keita Hyodo; Shino Hamao; Yuma Shimo; Hiroki Mori; Yasushi Nishihara

doi:10.1038/srep38535

Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

Yoshihiro Kubozono, Keita Hyodo, Shino Hamao, Yuma Shimo, Hiroki Mori, Yasushi Nishihara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b]dithiophene ((C₁₂H₂₅)₂-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm² V^-1 s^-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm²V^-1 s^-1, when a 150 nm-thick ZrO₂ gate dielectric was used. This implies that (C₁₂H₂₅)₂-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

Original language	English
Article number	38535
Journal	Scientific reports
Volume	6
DOIs	https://doi.org/10.1038/srep38535
Publication status	Published - Dec 6 2016

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title = "Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene",

abstract = "A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b]dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V-1 s-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm2V-1 s-1, when a 150 nm-thick ZrO2 gate dielectric was used. This implies that (C12H25)2-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.",

author = "Yoshihiro Kubozono and Keita Hyodo and Shino Hamao and Yuma Shimo and Hiroki Mori and Yasushi Nishihara",

note = "Funding Information: This study was partly supported by ACT-C, the Japan Science and Technology Agency (JST) as well as a Grant-in-aid (22244045, 24654105) from MEXT, the LEMSUPER project (JST-EU Superconductor Project) in the Japan Science and Technology Agency (JST), and Special Project of Okayama University/MEXT. Publisher Copyright: {\textcopyright} 2016 The Author(s).",

year = "2016",

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doi = "10.1038/srep38535",

language = "English",

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T1 - Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

AU - Kubozono, Yoshihiro

AU - Hyodo, Keita

AU - Hamao, Shino

AU - Shimo, Yuma

AU - Mori, Hiroki

AU - Nishihara, Yasushi

N1 - Funding Information: This study was partly supported by ACT-C, the Japan Science and Technology Agency (JST) as well as a Grant-in-aid (22244045, 24654105) from MEXT, the LEMSUPER project (JST-EU Superconductor Project) in the Japan Science and Technology Agency (JST), and Special Project of Okayama University/MEXT. Publisher Copyright: © 2016 The Author(s).

PY - 2016/12/6

Y1 - 2016/12/6

N2 - A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b]dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V-1 s-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm2V-1 s-1, when a 150 nm-thick ZrO2 gate dielectric was used. This implies that (C12H25)2-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

AB - A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b]dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V-1 s-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm2V-1 s-1, when a 150 nm-thick ZrO2 gate dielectric was used. This implies that (C12H25)2-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

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Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

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