Trap states and transport characteristics in picene thin film field-effect transistor

Naoko Kawasaki; Yoshihiro Kubozono; Hideki Okamoto; Akihiko Fujiwara; Minoru Yamaji

doi:10.1063/1.3076124

Trap states and transport characteristics in picene thin film field-effect transistor

Naoko Kawasaki, Yoshihiro Kubozono, Hideki Okamoto, Akihiko Fujiwara, Minoru Yamaji

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O₂ atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O₂ -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O₂ -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm² V ^-1 s^-1 is realized under 500 Torr of O₂.

Original language	English
Article number	043310
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3076124
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.",

author = "Naoko Kawasaki and Yoshihiro Kubozono and Hideki Okamoto and Akihiko Fujiwara and Minoru Yamaji",

note = "Funding Information: This work was partly supported by a Grant-in-Aid (Grant No. 18340104) from MEXT, Japan.",

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T1 - Trap states and transport characteristics in picene thin film field-effect transistor

AU - Kawasaki, Naoko

AU - Kubozono, Yoshihiro

AU - Okamoto, Hideki

AU - Fujiwara, Akihiko

AU - Yamaji, Minoru

N1 - Funding Information: This work was partly supported by a Grant-in-Aid (Grant No. 18340104) from MEXT, Japan.

PY - 2009

Y1 - 2009

N2 - Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

AB - Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

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Trap states and transport characteristics in picene thin film field-effect transistor

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