Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Yukinori Ono; Neil M. Zimmerman; Kenji Yamazaki; Yasuo Takahashi

doi:10.1143/jjap.42.l1109

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi

School of Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

Original language	English
Pages (from-to)	L1109-L1111
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	10 A
DOIs	https://doi.org/10.1143/jjap.42.l1109
Publication status	Published - Oct 1 2003

Keywords

Current standard
Nanotechnology
Single-electron transistor
Single-electron turnstile
Sllicon-on-insulator

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.42.l1109

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title = "Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor",

abstract = "A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.",

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AU - Ono, Yukinori

AU - Zimmerman, Neil M.

AU - Yamazaki, Kenji

AU - Takahashi, Yasuo

PY - 2003/10/1

Y1 - 2003/10/1

N2 - A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

AB - A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

KW - Current standard

KW - Nanotechnology

KW - Single-electron transistor

KW - Single-electron turnstile

KW - Sllicon-on-insulator

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 10 A

ER -

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Abstract

Keywords

ASJC Scopus subject areas

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