Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices

T. Miyadera; T. Kiwa; I. Kawayama; H. Murakami; M. Tonouchi

doi:10.1016/j.physc.2003.12.089

Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices

T. Miyadera, T. Kiwa, I. Kawayama, H. Murakami, M. Tonouchi

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines.

Original language	English
Pages (from-to)	1602-1606
Number of pages	5
Journal	Physica C: Superconductivity and its applications
Volume	412-414
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physc.2003.12.089
Publication status	Published - Oct 2004
Externally published	Yes

Keywords

Amorphous Ge
Optical-to-electrical signal converter
Terahertz radiation
YBCO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2003.12.089

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title = "Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices",

abstract = "We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines.",

keywords = "Amorphous Ge, Optical-to-electrical signal converter, Terahertz radiation, YBCO",

author = "T. Miyadera and T. Kiwa and I. Kawayama and H. Murakami and M. Tonouchi",

note = "Funding Information: This work was supported in part by the Ministry of Public Management, Home A_airs, Posts and Telecommunications, Strategic Information and Communications R&D Promotion Scheme, and a Grant-in-Aid for Scientific Research (B) No.13555107 from the Japan Society for the Promotion of Science.",

year = "2004",

month = oct,

doi = "10.1016/j.physc.2003.12.089",

language = "English",

volume = "412-414",

pages = "1602--1606",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SPEC. ISS.",

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TY - JOUR

T1 - Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices

AU - Miyadera, T.

AU - Kiwa, T.

AU - Kawayama, I.

AU - Murakami, H.

AU - Tonouchi, M.

N1 - Funding Information: This work was supported in part by the Ministry of Public Management, Home A_airs, Posts and Telecommunications, Strategic Information and Communications R&D Promotion Scheme, and a Grant-in-Aid for Scientific Research (B) No.13555107 from the Japan Society for the Promotion of Science.

PY - 2004/10

Y1 - 2004/10

N2 - We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines.

AB - We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines.

KW - Amorphous Ge

KW - Optical-to-electrical signal converter

KW - Terahertz radiation

KW - YBCO

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VL - 412-414

SP - 1602

EP - 1606

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - SPEC. ISS.

ER -

Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices

Abstract

Keywords

ASJC Scopus subject areas

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