Abstract
We study the change in the electronic structure of (Formula presented) across the δ-controlled metal-insulator (M-I) transition. X-ray-absorption spectroscopy shows the formation of hole states with substantial (Formula presented) character as a function of δ. Ultraviolet photoemission spectroscopy confirms the gap (Formula presented) closure across the M-I transition due to the doped hole states. The results show that a Mott-Hubbard system can have a charge-transfer character due to the strong hybridization, indicating a very mixed character ground state.
Original language | English |
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Pages (from-to) | 12050-12053 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 56 |
Issue number | 19 |
DOIs | |
Publication status | Published - Jan 1 1997 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics