Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

Toshio Ohta; Takayuki Nagano; Kenji Ochi; Yoshihiro Kubozono; Eiji Shikoh; Akihiko Fujiwara

doi:10.1063/1.2266596

Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Eiji Shikoh, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function 0 from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μ_p and the on-off ratio in the perylene FET increase with an increase in φ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small φ. These results can be reasonably explained on the basis of energy barrier for hole or electron.

Original language	English
Article number	053508
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2266596
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes",

abstract = "Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function 0 from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μp and the on-off ratio in the perylene FET increase with an increase in φ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small φ. These results can be reasonably explained on the basis of energy barrier for hole or electron.",

author = "Toshio Ohta and Takayuki Nagano and Kenji Ochi and Yoshihiro Kubozono and Eiji Shikoh and Akihiko Fujiwara",

note = "Funding Information: The authors appreciate K. Yokoo and Y. Iwasa of Tohoku University and K. Seki of Nagoya University for their valuable suggestion. This study is partly supported by a Grant-in-Aid (18340104) from MEXT, Japan.",

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doi = "10.1063/1.2266596",

language = "English",

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T1 - Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

AU - Ohta, Toshio

AU - Nagano, Takayuki

AU - Ochi, Kenji

AU - Kubozono, Yoshihiro

AU - Shikoh, Eiji

AU - Fujiwara, Akihiko

N1 - Funding Information: The authors appreciate K. Yokoo and Y. Iwasa of Tohoku University and K. Seki of Nagoya University for their valuable suggestion. This study is partly supported by a Grant-in-Aid (18340104) from MEXT, Japan.

PY - 2006

Y1 - 2006

N2 - Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function 0 from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μp and the on-off ratio in the perylene FET increase with an increase in φ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small φ. These results can be reasonably explained on the basis of energy barrier for hole or electron.

AB - Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function 0 from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μp and the on-off ratio in the perylene FET increase with an increase in φ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small φ. These results can be reasonably explained on the basis of energy barrier for hole or electron.

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Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

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