Very low driving-voltage InGaAlAs/lnAlAs electroabsorption modulators operating at 40 Gbit/s

H. Fukano; T. Yamanaka; M. Tamura; Y. Kondo; T. Saitoh

doi:10.1049/el:20057992

Very low driving-voltage InGaAlAs/lnAlAs electroabsorption modulators operating at 40 Gbit/s

H. Fukano, T. Yamanaka, M. Tamura, Y. Kondo, T. Saitoh

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.

Original language	English
Pages (from-to)	211-212
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	4
DOIs	https://doi.org/10.1049/el:20057992
Publication status	Published - Feb 17 2005
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20057992

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abstract = "A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.",

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AU - Fukano, H.

AU - Yamanaka, T.

AU - Tamura, M.

AU - Kondo, Y.

AU - Saitoh, T.

PY - 2005/2/17

Y1 - 2005/2/17

N2 - A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.

AB - A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.

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JO - Electronics Letters

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ER -

Very low driving-voltage InGaAlAs/lnAlAs electroabsorption modulators operating at 40 Gbit/s

Abstract

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