Abstract
We have performed X-ray absorption and valence band photoemission spectroscopy on ZrB2, which has the same AlB2 structure of MgB2, to study the electronic structure. From X-ray absorption spectra near the B1s-2p threshold, we found a small absorption edge at 188.23 eV with a negligible angular dependence upto 190 eV photon energy. This indicates that B2p partial density of states near the Fermi level (E F) is three dimensional, in sharp contrast to that of MgB 2. Resonant photoemission study across the B1s-2p threshold was found to be difficult due to a large contribution of Auger electrons. On the other hand, resonant photoemission across the Zr3p-4d threshold does show small change in intensity within 4 eV of EF. This indicates that the occupied states near EF have substantial Zr 4d character. These observations are in relatively good agreement with band structure calculations.
Original language | English |
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Pages (from-to) | 259-262 |
Number of pages | 4 |
Journal | Physica C: Superconductivity and its applications |
Volume | 392-396 |
Issue number | PART 1 |
DOIs | |
Publication status | Published - Oct 2003 |
Externally published | Yes |
Event | Proceedings of the 15th International Symposium on Superconduc - Yokohama, Japan Duration: Nov 11 2002 → Nov 13 2002 |
Keywords
- MgB related compounds
- Photoemission
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering