5-nm-Order electron-beam lithography for nanodevice fabrication

Kenji Yamazaki, Hideo Namatsu

研究成果査読

48 被引用数 (Scopus)

抄録

We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.

本文言語English
ページ(範囲)3767-3771
ページ数5
ジャーナルJapanese Journal of Applied Physics
43
6 B
DOI
出版ステータスPublished - 6月 2004
外部発表はい

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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