AES observation of electron-beam-induced layer formation on ZnS in the presence of water vapor

Akira Okada, Takao Oka

研究成果査読

2 被引用数 (Scopus)

抄録

Electron-beam-induced formation of a reacted layer was observed on a ZnS (110) cleaved surface. The layer was formed in the presence of 6.7×10 -6 Pa of water vapor. The layer was studied by Auger electron spectroscopy (AES) using an electron-beam energy and current density of 3 keV and 1.4×10-2 A/cm2, respectively. An approximately 200-Å-thick reacted layer was grown after 40 min exposure to the electron beam. Oxygen diffusion into the bulk during the formation was found. The oxygen diffused layer was twice as thick as the initially formed layer. The zinc concentration beneath the layer was 3% less than that of the original cleaved surface. The disappearance of characteristic energy loss structures indicated the reduction of ZnS bonds in the layer. The formed layer may play an important role in the surface degradation process of the ZnS phosphors.

本文言語English
ページ(範囲)6934-6937
ページ数4
ジャーナルJournal of Applied Physics
50
11
DOI
出版ステータスPublished - 1979
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学一般

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