TY - JOUR
T1 - An extended phenacene-type molecule, [8]Phenacene
T2 - Synthesis and transistor application
AU - Okamoto, Hideki
AU - Eguchi, Ritsuko
AU - Hamao, Shino
AU - Goto, Hidenori
AU - Gotoh, Kazuma
AU - Sakai, Yusuke
AU - Izumi, Masanari
AU - Takaguchi, Yutaka
AU - Gohda, Shin
AU - Kubozono, Yoshihiro
N1 - Funding Information:
The authors wish to express their gratitude to Mr. Yuma Shimo and Mr. Kazuya Teranishi for their kind assistance in the preparation of single crystals of [8]phenacene. This study was partly supported by Grants-in-aid (23684028, 22244045, 24654105, 24550054) from MEXT, by the program to disseminate the tenure tracking system of the Japan Science and Technology Agency (JST), by the LEMSUPER project (JST EU Superconductor Project), and the JST ACT-C project, and by the Program for Promoting the Enhancement of Research Universities.
PY - 2014/6/17
Y1 - 2014/6/17
N2 - AAnew phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8]phenacene and its FET application. An [8]phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest μ achieved in an [8]phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm2 V-1 s -1, demonstrating excellent FET characteristics; the average μ was evaluated as 1.2(3) cm2 V-1 s-1. The m value in the [8]phenacene electric-double-layer FET reached 16.4 cm2 V -1 s-1, which is the highest reported in EDL FETs based on phenacene-type molecules; the average μ was evaluated as 8(5) cm2 V-1 s-1. The μ values recorded in this study show that [8]phenacene is a promising molecule for transistor applications.
AB - AAnew phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8]phenacene and its FET application. An [8]phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest μ achieved in an [8]phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm2 V-1 s -1, demonstrating excellent FET characteristics; the average μ was evaluated as 1.2(3) cm2 V-1 s-1. The m value in the [8]phenacene electric-double-layer FET reached 16.4 cm2 V -1 s-1, which is the highest reported in EDL FETs based on phenacene-type molecules; the average μ was evaluated as 8(5) cm2 V-1 s-1. The μ values recorded in this study show that [8]phenacene is a promising molecule for transistor applications.
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U2 - 10.1038/srep05330
DO - 10.1038/srep05330
M3 - Article
AN - SCOPUS:84902772392
SN - 2045-2322
VL - 4
JO - Scientific Reports
JF - Scientific Reports
M1 - 5330
ER -