抄録
We have measured the magnetoresistance at high fields up to 15 T and at low temperatures down to 0.4 K for CeNiSn with the orthorhombic structure. The longitudinal magnetoresistance (J∥H) is small in magnitude for the magnetic field H∥b- and c-axis. On the other hand, the positive magnetoresistance is found to become dominant with the decrease of temperature for H∥b- and c-axis in the transverse configuration (J⊥H). For H∥a, the magnetoresistance is negative for any current direction. These experimental results have been discussed on the basis of the cyclotron motion of the compensated carriers with closed Fermi surfaces and the reduction of the anisotropic hybridization gap.
本文言語 | English |
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ページ(範囲) | 690-694 |
ページ数 | 5 |
ジャーナル | Physica B: Condensed Matter |
巻 | 230-232 |
DOI | |
出版ステータス | Published - 2月 1997 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学