抄録
Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] Voc = 0.25 V, and [short-circuit current density] Jsc = 2.1 mA/cm2 under illumination (AM 1.5, 100 mW/cm2).
| 本文言語 | English |
|---|---|
| ページ（範囲） | L970-L973 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 41 |
| 号 | 9 A/B |
| DOI | |
| 出版ステータス | Published - 9月 15 2002 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（その他）
- 物理学および天文学（全般）
UN SDG
この成果は、次の持続可能な開発目標に貢献しています
