Characteristics of titanium oxide films deposited by an activated reactive evaporation method

Tatsuo Fujii, Naoki Sakata, Jun Takada, Yoshinari Miura, Yoshihiro Daitoh, Mikio Takano

研究成果査読

70 被引用数 (Scopus)

抄録

Titanium di- and sesquioxide films were epitaxially grown on the (001) surface of sapphire single-crystalline substrates by an activated reactive evaporation method. Formation range for each titanium oxide was determined as a function of oxygen pressure (Po2) by means of x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films prepared at Po^.OX 10 4 Torr were stoichiometric (lOO)-oriented rutile of Ti02, and with decreasing Po2 they would accommodate more and more Ti3+ ions in the rutile structure. At P02 = 0.6 X 10~4 Torr, on the other hand, (OOl)-oriented Ti203 was formed and an electrical transition was clearly detected at about 400 K. However, the large lattice mismatch between the substrate and these films leads to a periodic introduction of misfit dislocations in the case of the Ti02 films and a mixing of stacking sequences for the Ti203 films.

本文言語English
ページ(範囲)1468-1473
ページ数6
ジャーナルJournal of Materials Research
9
6
DOI
出版ステータスPublished - 6月 1994

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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