Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

Y. Takeuchi; S. H. Kim; T. Iida; C. Asano; R. Wakasa; G. Maekawa; S. Nakahara; R. Yamane; H. Ikeda; T. Wada; K. Nagase; S. Matsuura; Y. Arai; I. Kurachi; M. Hazumi; T. Yoshida; S. Mima; K. Kiuchi; H. Ishino; A. Kibayashi; Y. Kato; G. Fujii; S. Shiki; M. Ukibe; M. Ohkubo; S. Kawahito; E. Ramberg; P. Rubinov; D. Sergatskov; S. B. Kim; Y. H. Kim; H. J. Lee

doi:10.1109/VLSI-TSA51926.2021.9440090

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

Y. Takeuchi, S. H. Kim, T. Iida, C. Asano, R. Wakasa, G. Maekawa, S. Nakahara, R. Yamane, H. Ikeda, T. Wada, K. Nagase, S. Matsuura, Y. Arai, I. Kurachi, M. Hazumi, T. Yoshida, S. Mima, K. Kiuchi, H. Ishino, A. KibayashiY. Kato, G. Fujii, S. Shiki, M. Ukibe, M. Ohkubo, S. Kawahito, E. Ramberg, P. Rubinov, D. Sergatskov, S. B. Kim, Y. H. Kim, H. J. Lee

研究成果

本文言語	English
ホスト出版物のタイトル	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781665419345
DOI	https://doi.org/10.1109/VLSI-TSA51926.2021.9440090
出版ステータス	Published - 4月 19 2021
イベント	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu 継続期間: 4月 19 2021 → 4月 22 2021

出版物シリーズ

名前	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
国/地域	Taiwan, Province of China
City	Hsinchu
Period	4/19/21 → 4/22/21

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学
制御と最適化

文献へのアクセス

10.1109/VLSI-TSA51926.2021.9440090

他のファイルとリンク

引用スタイル

Takeuchi, Y., Kim, S. H., Iida, T., Asano, C., Wakasa, R., Maekawa, G., Nakahara, S., Yamane, R., Ikeda, H., Wada, T., Nagase, K., Matsuura, S., Arai, Y., Kurachi, I., Hazumi, M., Yoshida, T., Mima, S., Kiuchi, K., Ishino, H., ... Lee, H. J. (2021). Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings [9440090] (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440090

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. / Takeuchi, Y.; Kim, S. H.; Iida, T. その他.
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440090 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

研究成果

Takeuchi, Y, Kim, SH, Iida, T, Asano, C, Wakasa, R, Maekawa, G, Nakahara, S, Yamane, R, Ikeda, H, Wada, T, Nagase, K, Matsuura, S, Arai, Y, Kurachi, I, Hazumi, M, Yoshida, T, Mima, S, Kiuchi, K, Ishino, H, Kibayashi, A, Kato, Y, Fujii, G, Shiki, S, Ukibe, M, Ohkubo, M, Kawahito, S, Ramberg, E, Rubinov, P, Sergatskov, D, Kim, SB, Kim, YH & Lee, HJ 2021, Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440090, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, Province of China, 4/19/21. https://doi.org/10.1109/VLSI-TSA51926.2021.9440090

Takeuchi Y, Kim SH, Iida T, Asano C, Wakasa R, Maekawa G その他. Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440090. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440090

Takeuchi, Y. ; Kim, S. H. ; Iida, T. その他. / Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

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author = "Y. Takeuchi and Kim, {S. H.} and T. Iida and C. Asano and R. Wakasa and G. Maekawa and S. Nakahara and R. Yamane and H. Ikeda and T. Wada and K. Nagase and S. Matsuura and Y. Arai and I. Kurachi and M. Hazumi and T. Yoshida and S. Mima and K. Kiuchi and H. Ishino and A. Kibayashi and Y. Kato and G. Fujii and S. Shiki and M. Ukibe and M. Ohkubo and S. Kawahito and E. Ramberg and P. Rubinov and D. Sergatskov and Kim, {S. B.} and Kim, {Y. H.} and Lee, {H. J.}",

note = "Funding Information: We thank KEK Detector Technology Project for supporting us in development of STJs and SOI amplifiers at KEK. A Part of this work was supported by the Ministry of Education, Science, Sports and Culture of Japan (MEXT KAKENHI Grant Number 20H019). The Nb/Al-STJs were fabricated in the clean room for analog-digital superconductivity (CRAVITY) in National Institute of Advanced Industrial Science and Technology (AIST). The SOI amplifier development is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Cadence Design Systems, Inc., Synopsys, Inc. and Mentor Graphics, Inc.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

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T1 - Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

AU - Takeuchi, Y.

AU - Kim, S. H.

AU - Iida, T.

AU - Asano, C.

AU - Wakasa, R.

AU - Maekawa, G.

AU - Nakahara, S.

AU - Yamane, R.

AU - Ikeda, H.

AU - Wada, T.

AU - Nagase, K.

AU - Matsuura, S.

AU - Arai, Y.

AU - Kurachi, I.

AU - Hazumi, M.

AU - Yoshida, T.

AU - Mima, S.

AU - Kiuchi, K.

AU - Ishino, H.

AU - Kibayashi, A.

AU - Kato, Y.

AU - Fujii, G.

AU - Shiki, S.

AU - Ukibe, M.

AU - Ohkubo, M.

AU - Kawahito, S.

AU - Ramberg, E.

AU - Rubinov, P.

AU - Sergatskov, D.

AU - Kim, S. B.

AU - Kim, Y. H.

AU - Lee, H. J.

N1 - Funding Information: We thank KEK Detector Technology Project for supporting us in development of STJs and SOI amplifiers at KEK. A Part of this work was supported by the Ministry of Education, Science, Sports and Culture of Japan (MEXT KAKENHI Grant Number 20H019). The Nb/Al-STJs were fabricated in the clean room for analog-digital superconductivity (CRAVITY) in National Institute of Advanced Industrial Science and Technology (AIST). The SOI amplifier development is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Cadence Design Systems, Inc., Synopsys, Inc. and Mentor Graphics, Inc.

PY - 2021/4/19

Y1 - 2021/4/19

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M3 - Conference contribution

AN - SCOPUS:85108170374

T3 - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

BT - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021

Y2 - 19 April 2021 through 22 April 2021

ER -