TY - GEN
T1 - DLTS study of Pd-H complexes in Si
AU - Abe, Sunao
AU - Goura, Ryuichi
AU - Shimoe, Koichi
AU - Kamiura, Yoichi
AU - Yamashita, Yoshifumi
AU - Ishiyama, Takeshi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.
AB - We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.
KW - Annealing
KW - DLTS
KW - Energy level
KW - Hydrogen
KW - Palladium
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=84872455057&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872455057&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.725.213
DO - 10.4028/www.scientific.net/MSF.725.213
M3 - Conference contribution
AN - SCOPUS:84872455057
SN - 9783037854426
T3 - Materials Science Forum
SP - 213
EP - 216
BT - Defects-Recognition, Imaging and Physics in Semiconductors XIV
PB - Trans Tech Publications Ltd
T2 - 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Y2 - 25 September 2011 through 29 September 2011
ER -