Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation

Keiji Tsukada, Masatoshi Kariya, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada, Tsuneyoshi Maehara, Tadayoshi Yamamoto, Shinsuke Kunitsugu

研究成果査読

27 被引用数 (Scopus)

抄録

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 °C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions.

本文言語English
論文番号024206
ジャーナルJapanese journal of applied physics
49
2 Part 1
DOI
出版ステータスPublished - 2月 2010

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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