Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

研究成果査読

39 被引用数 (Scopus)

抄録

Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. In this paper, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail for several voltages with two switching frequencies. We also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage source. We construct and test prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter with a gate drive circuit. The problems to be solved for the normally on GaN HEMT, which has a (static) voltage rating of over 600 V, are clarified on the basis of the experimental results.

本文言語English
論文番号6954492
ページ(範囲)2415-2422
ページ数8
ジャーナルIEEE Transactions on Industry Applications
51
3
DOI
出版ステータスPublished - 5月 1 2015

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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