Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor

Shintaro Ogura, Heajeong Cheong, Sei Uemura, Hirobumi Ushijima, Nobuko Fukuda

研究成果査読

6 被引用数 (Scopus)

抄録

Wedesigned an aqueous-fluoroalcoholic InGaZnO precursor for obtaining thin-film transistors (TFTs) on a flexible plastic film by spin-coating and low-temperature annealing processes without inert gas conditions. The precursor shows a low surface tension (23.7mNm-1), which is advantageous for homogeneous coating onto plastic film. Thermal analysis of the precursor indicates formation of metal oxides at less than 300 °C. InGaZnO TFTs were obtained from the precursor by annealing at 300 °CviaUVirradiation under humid atmosphere on a transparent polyimide film as well as on a p-Si substrate. The bottom-gate top-contact TFTs on the p-Si show 5.1 cm2 V-1 s-1 of the average saturation mobility. The top-gate top-contact TFTs on the transparent polyimide film drive with 0.99 cm2 V-1 s-1 of the average saturation mobility. The transparent polyimide film maintains flexibility even after humid-UV irradiation and annealing processes. The InGaZnO TFTs on the transparent polyimide film show more than 80% transmittance in the visible light region between 400 and 780 nm.

本文言語English
論文番号045001
ジャーナルFlexible and Printed Electronics
1
4
DOI
出版ステータスPublished - 12月 1 2016
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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