抄録
A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1664-1665 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 35 |
| 号 | 19 |
| DOI | |
| 出版ステータス | Published - 9月 16 1999 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学