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High Pressure Structures of Organic Low Dimensional Conductor DCNQI Compounds

  • Y. Nogami
  • , S. Hayashi
  • , T. Date
  • , K. Oshima
  • , K. Hiraki
  • , K. Kanoda
  • , K. Hiraki
  • , K. Kanoda

研究成果査読

抄録

Using X-ray and DAC, room-temperature crystal structures under physical pressure(PP) were solved for DCNQI-Cu compounds which exhibit particular metal-insulator(M-I) transition owing to their electronic low dimensionality(CDW) and strong correlation(Mott). This M-I transition is known to be triggered with moderate(=small) PP or chemical substitution(chemical pressure:CP). Observed high pressure structures were compared with theoretical structure determinations. From the structural viewpoint, relation between PP and CP effects on the M-I transition was discussed, [organic conductor, metal-insulator transition, charge density wave, Mott transition, X-ray diffraction].

本文言語English
ページ(範囲)404-406
ページ数3
ジャーナルReview of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
7
DOI
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • 化学一般
  • 材料科学一般
  • 凝縮系物理学

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