抄録
Using X-ray and DAC, room-temperature crystal structures under physical pressure(PP) were solved for DCNQI-Cu compounds which exhibit particular metal-insulator(M-I) transition owing to their electronic low dimensionality(CDW) and strong correlation(Mott). This M-I transition is known to be triggered with moderate(=small) PP or chemical substitution(chemical pressure:CP). Observed high pressure structures were compared with theoretical structure determinations. From the structural viewpoint, relation between PP and CP effects on the M-I transition was discussed, [organic conductor, metal-insulator transition, charge density wave, Mott transition, X-ray diffraction].
| 本文言語 | English |
|---|---|
| ページ(範囲) | 404-406 |
| ページ数 | 3 |
| ジャーナル | Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu |
| 巻 | 7 |
| DOI | |
| 出版ステータス | Published - 1998 |
ASJC Scopus subject areas
- 化学一般
- 材料科学一般
- 凝縮系物理学
フィンガープリント
「High Pressure Structures of Organic Low Dimensional Conductor DCNQI Compounds」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。引用スタイル
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS