TY - JOUR
T1 - High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)
AU - Sato, T.
AU - Komatsu, H.
AU - Terashima, K.
AU - Takahashi, T.
AU - Shimakawa, M.
AU - Hayashi, K.
N1 - Funding Information:
This work is supported by a grant from the MEXT of Japan.
PY - 2005/6
Y1 - 2005/6
N2 - High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.
AB - High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.
KW - Photoemission
KW - Transition metal dichalcogenides
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U2 - 10.1016/j.elspec.2005.01.243
DO - 10.1016/j.elspec.2005.01.243
M3 - Article
AN - SCOPUS:17444424627
SN - 0368-2048
VL - 144-147
SP - 633
EP - 637
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
ER -