High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura; Takayuki Yamanaka; Hideki Fukano; Yuichi Akage; Yasuhiro Kondo; Tadashi Saitoh

High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

研究成果 › 査読

抄録

InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

本文言語	English
ページ（範囲）	491-494
ページ数	4
ジャーナル	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータス	Published - 7月 25 2003
外部発表	はい
イベント	2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA 継続期間: 5月 12 2003 → 5月 16 2003

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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引用スタイル

@article{45eb643328ab45ceb38e0a695690c74f,

title = "High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics",

abstract = "InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.",

author = "Munehisa Tamura and Takayuki Yamanaka and Hideki Fukano and Yuichi Akage and Yasuhiro Kondo and Tadashi Saitoh",

year = "2003",

month = jul,

day = "25",

language = "English",

pages = "491--494",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Conference Indium Phosphide and Related Materials ; Conference date: 12-05-2003 Through 16-05-2003",

}

TY - JOUR

T1 - High-speed electroabsorption modulators using ruthenium-doped SI-InP

T2 - 2003 International Conference Indium Phosphide and Related Materials

AU - Tamura, Munehisa

AU - Yamanaka, Takayuki

AU - Fukano, Hideki

AU - Akage, Yuichi

AU - Kondo, Yasuhiro

AU - Saitoh, Tadashi

PY - 2003/7/25

Y1 - 2003/7/25

N2 - InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

AB - InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0038825115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038825115&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038825115

SN - 1092-8669

SP - 491

EP - 494

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Y2 - 12 May 2003 through 16 May 2003

ER -