Huge residual resistivity in the quantum critical region of CeAgSb2

Miho Nakashima, Shingo Kirita, Rihito Asai, Tatsuo C. Kobayashi, Tomoyuki Okubo, Mineko Yamada, Arumugam Thamizhavel, Yoshihiko Inada, Rikio Settai, Andre Galatanu, Etsuji Yamamoto, Takao Ebihara, Yoshichika Õnuki

研究成果査読

14 被引用数 (Scopus)

抄録

We have studied the effect of pressure on the electrical resistivity of a high-quality single crystal CeAgSb2 which has a small net ferromagnetic moment of 0.4 μB/Ce. The magnetic ordering temperature Tord = 9.7 K decreases with increasing pressure p and disappears at a critical pressure pc ≃ 3.3 GPa. The residual resistivity, which is close to zero up to 3 GPa, increases steeply above 3 GPa, reaching 55 μΩ cm at pc. A huge residual resistivity is found to appear when the magnetic order disappears.

本文言語English
ページ(範囲)L111-L117
ジャーナルJournal of Physics Condensed Matter
15
4
DOI
出版ステータスPublished - 2月 5 2003
外部発表はい

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学

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