抄録
In situ monitoring of indentation cracking in dielectric ceramics was examined by introducing a semiconducting region in the surface of the ceramics. Titanium dioxide was employed as the dielectric ceramic. The monitoring sensitivity can be enhanced by controlling the thickness of the conducting layer.
本文言語 | English |
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ページ(範囲) | 221-223 |
ページ数 | 3 |
ジャーナル | Journal of Materials Science Letters |
巻 | 19 |
号 | 3 |
DOI | |
出版ステータス | Published - 2000 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)