TY - GEN
T1 - Laser terahertz emission microscope for inspecting electrical failures in integrated circuits
AU - Yamashita, Masatsugu
AU - Kiwa, Toshihiko
AU - Tonouchi, Masayoshi
AU - Nikawa, Kiyoshi
AU - Otani, Chiko
AU - Kawase, Kodo
PY - 2004/1/1
Y1 - 2004/1/1
N2 - The inspection and fault analysis of semiconductor devices has become a critical issue with increasing demands for quality and reliability in circuits as stated in L. A. Krauss et al. (2001), K. Nikawa (2002) and K. Nikawa et al. (2003). Recently, we have developed a laser-terahertz (THz) emission microscope (LTEM) that can be applied for the noncontact and nondestructive inspection of the electrical faults in circuits presented in K. Nikawa et al. (2003). The LTEM can image the amplitude profile of the THz wave emitted by scanning the sample with femtosecond (fs) laser pulses. The amplitude of the THz emission generated by the transient photocurrent is proportional to the local electric field at the laser-irradiated area according to T. Kowa et al. (2003). Therefore, the LTEM image of the semiconductor device while it operates reflects the electric field distribution in the chip. By comparing the LTEM image of a damaged chip with that of a normal one, we can localize the electrical faults. In this work, we report experimental results on a biased 8-bit microprocessor, as well as unbiased MOSFETs embedded in a test element group (TEG).
AB - The inspection and fault analysis of semiconductor devices has become a critical issue with increasing demands for quality and reliability in circuits as stated in L. A. Krauss et al. (2001), K. Nikawa (2002) and K. Nikawa et al. (2003). Recently, we have developed a laser-terahertz (THz) emission microscope (LTEM) that can be applied for the noncontact and nondestructive inspection of the electrical faults in circuits presented in K. Nikawa et al. (2003). The LTEM can image the amplitude profile of the THz wave emitted by scanning the sample with femtosecond (fs) laser pulses. The amplitude of the THz emission generated by the transient photocurrent is proportional to the local electric field at the laser-irradiated area according to T. Kowa et al. (2003). Therefore, the LTEM image of the semiconductor device while it operates reflects the electric field distribution in the chip. By comparing the LTEM image of a damaged chip with that of a normal one, we can localize the electrical faults. In this work, we report experimental results on a biased 8-bit microprocessor, as well as unbiased MOSFETs embedded in a test element group (TEG).
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U2 - 10.1109/IMFEDK.2004.1566392
DO - 10.1109/IMFEDK.2004.1566392
M3 - Conference contribution
AN - SCOPUS:34247367884
T3 - IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
SP - 29
EP - 30
BT - IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
A2 - Nozawa, Hiroshi
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
Y2 - 26 July 2004 through 28 July 2004
ER -