Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Akira Sasaki; Katsunobu Nishihara; Atsushi Sunahara; Hiroyuki Furukawa; Takeshi Nishikawa; Fumihiro Koike

doi:10.1117/12.846467

Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Akira Sasaki, Katsunobu Nishihara, Atsushi Sunahara, Hiroyuki Furukawa, Takeshi Nishikawa, Fumihiro Koike

研究成果

抄録

We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

本文言語	English
ホスト出版物のタイトル	Extreme Ultraviolet (EUV) Lithography
DOI	https://doi.org/10.1117/12.846467
出版ステータス	Published - 6月 17 2010
イベント	Extreme Ultraviolet (EUV) Lithography - San Jose, CA 継続期間: 2月 22 2010 → 2月 25 2010

出版物シリーズ

名前	Proceedings of SPIE - The International Society for Optical Engineering
巻	7636
ISSN（印刷版）	0277-786X

Other

Other	Extreme Ultraviolet (EUV) Lithography
国/地域	United States
City	San Jose, CA
Period	2/22/10 → 2/25/10

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
コンピュータサイエンスの応用
応用数学
電子工学および電気工学

文献へのアクセス

10.1117/12.846467

他のファイルとリンク

引用スタイル

Sasaki, A, Nishihara, K, Sunahara, A, Furukawa, H, Nishikawa, T & Koike, F 2010, Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source. in Extreme Ultraviolet (EUV) Lithography., 76363D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7636, Extreme Ultraviolet (EUV) Lithography, San Jose, CA, United States, 2/22/10. https://doi.org/10.1117/12.846467

@inproceedings{91eec798c6b54415b0a083d3b93384dd,

title = "Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source",

abstract = "We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.",

author = "Akira Sasaki and Katsunobu Nishihara and Atsushi Sunahara and Hiroyuki Furukawa and Takeshi Nishikawa and Fumihiro Koike",

year = "2010",

month = jun,

day = "17",

doi = "10.1117/12.846467",

language = "English",

isbn = "9780819480507",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Extreme Ultraviolet (EUV) Lithography",

note = "Extreme Ultraviolet (EUV) Lithography ; Conference date: 22-02-2010 Through 25-02-2010",

}

TY - GEN

T1 - Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

AU - Sasaki, Akira

AU - Nishihara, Katsunobu

AU - Sunahara, Atsushi

AU - Furukawa, Hiroyuki

AU - Nishikawa, Takeshi

AU - Koike, Fumihiro

PY - 2010/6/17

Y1 - 2010/6/17

N2 - We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

AB - We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

UR - http://www.scopus.com/inward/record.url?scp=77953467052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953467052&partnerID=8YFLogxK

U2 - 10.1117/12.846467

DO - 10.1117/12.846467

M3 - Conference contribution

AN - SCOPUS:77953467052

SN - 9780819480507

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Extreme Ultraviolet (EUV) Lithography

T2 - Extreme Ultraviolet (EUV) Lithography

Y2 - 22 February 2010 through 25 February 2010

ER -

Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

抄録

出版物シリーズ

Other

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル