抄録
The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1212-1219 |
| ページ数 | 8 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 5039 II |
| DOI | |
| 出版ステータス | Published - 10月 1 2003 |
| イベント | Advances in Resist Technology and Processing XX - Santa Clara, CA 継続期間: 2月 24 2003 → 2月 26 2003 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- コンピュータ サイエンスの応用
- 応用数学
- 電子工学および電気工学