The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 10月 1 2003|
|イベント||Advances in Resist Technology and Processing XX - Santa Clara, CA|
継続期間: 2月 24 2003 → 2月 26 2003
ASJC Scopus subject areas
- コンピュータ サイエンスの応用