Molecular weight effect on line-edge roughness

Toru Yamaguchi, Kenji Yamazaki, Hideo Namatsu


11 被引用数 (Scopus)


The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

ジャーナルProceedings of SPIE - The International Society for Optical Engineering
5039 II
出版ステータスPublished - 10月 1 2003
イベントAdvances in Resist Technology and Processing XX - Santa Clara, CA
継続期間: 2月 24 20032月 26 2003

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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