Quantum transport phenomena in narrow-gap semiconductors under high pressure and high magnetic field

Kazuto Akiba, Masashi Tokunaga

研究成果査読

抄録

In this article, we review our exploration of unconventional electronic states near the metal-insulator boundary in black phosphorus and lead telluride, which have long been known as narrow-gap semiconductors with simple crystal structure. In such low carrier systems with high mobility, the energy band structure and physical property can be drastically affected by application of high magnetic field and high pressure. High pressure is a powerful tool to continuously tune the band structure from semiconductor to semimetal without degradation of the mobility.

本文言語English
ページ(範囲)260-273
ページ数14
ジャーナルReview of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
30
4
DOI
出版ステータスPublished - 2020

ASJC Scopus subject areas

  • 化学一般
  • 材料科学一般
  • 凝縮系物理学

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