Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Heajeong Cheong; Shintaro Ogura; Hirobumi Ushijima; Manabu Yoshida; Nobuko Fukuda; Sei Uemura

doi:10.1063/1.4922512

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Heajeong Cheong, Shintaro Ogura, Hirobumi Ushijima, Manabu Yoshida, Nobuko Fukuda, Sei Uemura

研究成果 › 査読

19 被引用数 (Scopus)

抄録

We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10⁸ and a field-effect mobility of 0.3 cm² V^-1s^-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

本文言語	English
論文番号	067127
ジャーナル	AIP Advances
巻	5
号	6
DOI	https://doi.org/10.1063/1.4922512
出版ステータス	Published - 6月 1 2015
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.4922512

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title = "Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation",

abstract = "We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.",

author = "Heajeong Cheong and Shintaro Ogura and Hirobumi Ushijima and Manabu Yoshida and Nobuko Fukuda and Sei Uemura",

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AU - Cheong, Heajeong

AU - Ogura, Shintaro

AU - Ushijima, Hirobumi

AU - Yoshida, Manabu

AU - Fukuda, Nobuko

AU - Uemura, Sei

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

AB - We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

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Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

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