Specific heat of aluminium-doped superconducting silicon carbide

M. Kriener, T. Muranaka, Y. Kikuchi, J. Akimitsu, Y. Maeno

研究成果査読

1 被引用数 (Scopus)

抄録

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

本文言語English
論文番号012096
ジャーナルJournal of Physics: Conference Series
200
SECTION 1
DOI
出版ステータスPublished - 2010
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学一般

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