Spin-coatable Al2O3 resists in electron beam nanolithography

M. S.M. Saifullah; H. Namatsu; T. Yamaguchi; K. Yamazaki; K. Kurihara

doi:10.1117/12.350248

Spin-coatable Al₂O₃ resists in electron beam nanolithography

M. S.M. Saifullah
, H. Namatsu
, T. Yamaguchi
, K. Yamazaki
, K. Kurihara

研究成果 › 査読

12 被引用数 (Scopus)

抄録

Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al₂O₃ resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al₂O₃ gel films prepared by aluminum tri-secbutoxide, Al(OBu^s)₃, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

本文言語	English
ページ（範囲）	633-642
ページ数	10
ジャーナル	Proceedings of SPIE - The International Society for Optical Engineering
巻	3678
号	I
DOI	https://doi.org/10.1117/12.350248
出版ステータス	Published - 1999
外部発表	はい
イベント	Proceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI - Santa Clara, CA, USA 継続期間: 3月 15 1999 → 3月 17 1999

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
コンピュータサイエンスの応用
応用数学
電子工学および電気工学

文献へのアクセス

10.1117/12.350248

他のファイルとリンク

引用スタイル

@article{b6b5bbbd1f624f05b19bcd6979ce3e20,

title = "Spin-coatable Al2O3 resists in electron beam nanolithography",

abstract = "Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.",

author = "Saifullah, \{M. S.M.\} and H. Namatsu and T. Yamaguchi and K. Yamazaki and K. Kurihara",

year = "1999",

doi = "10.1117/12.350248",

language = "English",

volume = "3678",

pages = "633--642",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "I",

note = "Proceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI ; Conference date: 15-03-1999 Through 17-03-1999",

}

TY - JOUR

T1 - Spin-coatable Al2O3 resists in electron beam nanolithography

AU - Saifullah, M. S.M.

AU - Namatsu, H.

AU - Yamaguchi, T.

AU - Yamazaki, K.

AU - Kurihara, K.

PY - 1999

Y1 - 1999

N2 - Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

AB - Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

UR - https://www.scopus.com/pages/publications/0032628395

UR - https://www.scopus.com/pages/publications/0032628395#tab=citedBy

U2 - 10.1117/12.350248

DO - 10.1117/12.350248

M3 - Conference article

AN - SCOPUS:0032628395

SN - 0277-786X

VL - 3678

SP - 633

EP - 642

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - I

T2 - Proceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI

Y2 - 15 March 1999 through 17 March 1999

ER -